High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates - 先进材料平台 | LabXing

array(2) { ["lab"]=> string(4) "1058" ["publication"]=> string(4) "8532" } High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates - 先进材料平台 | LabXing

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简介面向应用的先进材料及器件制备

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High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates

2017

期刊 ACS Applied Materials & Interfaces

作者 Chenguang He · Wei Zhao · Kang Zhang · Longfei He · Hualong Wu · Ningyang Liu · Shan Zhang · Xiaoyan Liu · Zhitao Chen

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卷 9
期 49
页码 43386-43392
American Chemical Society (ACS)
ISSN: 1944-8244
DOI: 10.1021/acsami.7b14801

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