单粒子效应研究组

Characterization of Heavy Ion Induced SET Features in 22-nm FD-SOI Testing Circuits

2020

期刊 IEEE Access

作者 Chang Cai · Ze He · Tianqi Liu · Gengsheng Chen · Jian Yu · Liewei Xu · Jie Liu

Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs

2020

期刊 Electronics

作者 Peixiong Zhao · Tianqi Liu · Chang Cai · Ze He · Dongqing Li · Jie Liu

Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

2020

期刊 Chinese Physics B

作者 Bing Ye · Li-Hua Mo · Tao Liu · Jie Luo · Dong-Qing Li · Pei-Xiong Zhao · Chang Cai · Ze He · You-Mei Sun · Ming-Dong Hou · Jie Liu

Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 nm FDSOI SRAMs

2020

会议 2020 IEEE International Reliability Physics Symposium (IRPS)

作者 Chang Cai · Tianqi Liu · Jie Liu · Gengsheng Chen · Luchang Ding · Kai Zhao · Bingxu Ning · Mingjie Shen

Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-nm UTBB FD-SOI Technology

2020

期刊 IEEE Transactions on Nuclear Science

作者 Chang Cai · Tianqi Liu · Peixiong Zhao · Xue Fan · Hongyang Huang · Dongqing Li · Lingyun Ke · Ze He · Liewei Xu · Gengsheng Chen · Jie Liu

Design and verification of universal evaluation system for single event effect sensitivity measurement in very-large-scale integrated circuits

2019

期刊 IEICE Electronics Express

作者 Liewei Xu · Chang Cai · Tianqi Liu · Lingyun Ke · Jun Yu · Chang Wu

Effects of total ionizing dose on single event effect sensitivity of FRAMs

2019

期刊 Microelectronics Reliability

作者 Qinggang Ji · Jie Liu · Dongqing Li · Tianqi Liu · Bing Ye · Peixiong Zhao · Youmei Sun

Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs

2019

期刊 Nuclear Science and Techniques

作者 Chang Cai · Tian-Qi Liu · Xiao-Yuan Li · Jie Liu · Zhan-Gang Zhang · Chao Geng · Pei-Xiong Zhao · Dong-Qing Li · Bing Ye · Qing-Gang Ji · Li-Hua Mo

Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories

2019

期刊 Microelectronics Reliability

作者 Ya-Nan Yin · Jie Liu · Tian-Qi Liu · Bing Ye · Qing-Gang Ji · You-Mei Sun · Xin-Jie Zhou

Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs

2019

期刊 Electronics

作者 Chang Cai · Xue Fan · Jie Liu · Dongqing Li · Tianqi Liu · Lingyun Ke · Peixiong Zhao · Ze He

Heavy ion irradiation induced hard error in MTJ of the MRAM memory array

2019

期刊 Microelectronics Reliability

作者 P.x. Zhao · T.q. Liu · C. Cai · D.q. Li · Q.g. Ji · Z. He · P.f. Zhai · Y.m. Sun · S. Gu · J. Liu

SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell

2019

期刊 Microelectronics Reliability

作者 C. Cai · P.x. Zhao · L.w. Xu · T.q. Liu · D.q. Li · L.y. Ke · Z. He · J. Liu

Anomalous annealing of floating gate errors due to heavy ion irradiation

2018

期刊 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

作者 Yanan Yin · Jie Liu · Youmei Sun · Mingdong Hou · Tianqi Liu · Bing Ye · Qinggang Ji · Jie Luo · Peixiong Zhao

Heavy Ion Radiation Effects on a 130-nm COTS NVSRAM Under Different Measurement Conditions

2018

期刊 IEEE Transactions on Nuclear Science

作者 Tianqi Liu · Jie Liu · Kai Xi · Zhangang Zhang · Deyan He · Bing Ye · Yanan Yin · Qinggang Ji · Bin Wang · Jie Luo · Youmei Sun · Pengfei Zhai

Influences of total ionizing dose on single event effect sensitivity in floating gate cells

2018

期刊 Chinese Physics B

作者 Ya-Nan Yin · Jie Liu · Qing-Gang Ji · Pei-Xiong Zhao · Tian-Qi Liu · Bing Ye · Jie Luo · You-Mei Sun · Ming-Dong Hou

A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM

2017

期刊 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

作者 Bin Wang · Chuanbin Zeng · Chao Geng · Tianqi Liu · Maaz Khan · Weiwei Yan · Mingdong Hou · Bing Ye · Youmei Sun · Yanan Yin · Jie Luo · Qinggang Ji · Fazhan Zhao · Jie Liu

Application of SEU imaging for analysis of device architecture using a 25 MeV/u 86 Kr ion microbeam at HIRFL

2017

期刊 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

作者 Tianqi Liu · Zhenlei Yang · Jinlong Guo · Guanghua Du · Teng Tong · Xiaohui Wang · Hong Su · Wenjing Liu · Jiande Liu · Bin Wang · Bing Ye · Jie Liu

Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell

2017

期刊 Chinese Physics B

作者 Bing Ye · Jie Liu · Tie-Shan Wang · Tian-Qi Liu · Jie Luo · Bin Wang · Ya-Nan Yin · Qing-Gang Ji · Pei-Pei Hu · You-Mei Sun · Ming-Dong Hou

Influence of heavy ion flux on single event effect testing in memory devices

2017

期刊 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

作者 Jie Luo · Jie Liu · Youmei Sun · Mingdong Hou · Kai Xi · Tianqi Liu · Bin Wang · Bing Ye

Low energy proton induced single event upset in 65 nm DDR and QDR commercial SRAMs

2017

期刊 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

作者 B. Ye · J. Liu · T.s. Wang · T.q. Liu · K. Maaz · J. Luo · B. Wang · Y.n. Yin · Q.g. Ji · Y.m. Sun · M.d. Hou

Erratum to: Experimental study on heavy ion single-event effects in flash-based FPGAs

2016

期刊 Nuclear Science and Techniques

作者 Zhen-Lei Yang · Xiao-Hui Wang · Hong Su · Jie Liu · Tian-Qi Liu · Kai Xi · Bin Wang · Song Gu · Qian-Shun She

Monte-Carlo prediction of single-event characteristics of 65 nm CMOS SRAM under hundreds of MeV/n heavy-ions in space

2016

会议 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

作者 Zhangang Zhang · Zhifeng Lei · Yunfei En · Jie Liu

Monte Carlo predictions of proton SEE cross-sections from heavy ion test data

2016

期刊 Chinese Physics C

作者 Kai Xi · Chao Geng · Zhan-Gang Zhang · Ming-Dong Hou · You-Mei Sun · Jie Luo · Tian-Qi Liu · Bin Wang · Bing Ye · Ya-Nan Yin · Jie Liu

Prediction of proton-induced SEE error rates for the VATA160 ASIC

2016

期刊 Nuclear Science and Techniques

作者 Kai Xi · Di Jiang · Shan-Shan Gao · Jie Kong · Hong-Yun Zhao · Hai-Bo Yang · Tian-Qi Liu · Bin Wang · Bing Ye · Jie Liu

Influence of edge effects on single event upset susceptibility of SOI SRAMs

2015

期刊 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

作者 Song Gu · Jie Liu · Fazhan Zhao · Zhangang Zhang · Jinshun Bi · Chao Geng · Mingdong Hou · Gang Liu · Tianqi Liu · Kai Xi

Impact of temperature on single event upset measurement by heavy ions in SRAM devices

2014

期刊 Journal of Semiconductors

作者 Tianqi Liu · Chao Geng · Zhangang Zhang · Fazhan Zhao · Song Gu · Teng Tong · Kai Xi · Gang Liu · Zhengsheng Han · Mingdong Hou · Jie Liu

Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies

2014

期刊 IEEE Transactions on Nuclear Science

作者 Zhangang Zhang · Jie Liu · Mingdong Hou · Song Gu · Tianqi Liu · Fazhan Zhao · Chao Geng · Kai Xi · Youmei Sun · Huijun Yao · Jie Luo · Jinglai Duan · Dan Mo · Gang Liu · Zhengsheng Han · Yunfei En

Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect

2014

期刊 Chinese Physics B

作者 Chao Geng · Kai Xi · Tian-Qi Liu · Song Gu · Jie Liu

Simulation of the characteristics of low-energy proton induced single event upset

2014

期刊 Science China Physics, Mechanics & Astronomy

作者 Chao Geng · Kai Xi · Tianqi Liu · Jie Liu

Supply voltage dependence of single event upset sensitivity in diverse SRAM devices

2014

会议 2014 10th International Conference on Reliability, Maintainability and Safety (ICRMS)

作者 Zhangang Zhang · Jie Liu · Youmei Sun · Mingdong Hou · Teng Tong · Song Gu · Tianqi Liu · Chao Geng · Kai Xi · Huijun Yao · Jie Luo · Jinglai Duan · Dan Mo · Hong Su · Zhifeng Lei · Yunfei En · Yun Huang

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Characterization of Heavy Ion Induced SET Features in 22-nm FD-SOI Testing Circuits

Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs

Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 nm FDSOI SRAMs

Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-nm UTBB FD-SOI Technology

Design and verification of universal evaluation system for single event effect sensitivity measurement in very-large-scale integrated circuits

Effects of total ionizing dose on single event effect sensitivity of FRAMs

Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs

Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories

Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs

Heavy ion irradiation induced hard error in MTJ of the MRAM memory array

SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell

Anomalous annealing of floating gate errors due to heavy ion irradiation

Heavy Ion Radiation Effects on a 130-nm COTS NVSRAM Under Different Measurement Conditions

Influences of total ionizing dose on single event effect sensitivity in floating gate cells

A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM

Application of SEU imaging for analysis of device architecture using a 25 MeV/u 86 Kr ion microbeam at HIRFL

Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell

Influence of heavy ion flux on single event effect testing in memory devices

Low energy proton induced single event upset in 65 nm DDR and QDR commercial SRAMs

Erratum to: Experimental study on heavy ion single-event effects in flash-based FPGAs

Monte-Carlo prediction of single-event characteristics of 65 nm CMOS SRAM under hundreds of MeV/n heavy-ions in space

Monte Carlo predictions of proton SEE cross-sections from heavy ion test data

Prediction of proton-induced SEE error rates for the VATA160 ASIC

Influence of edge effects on single event upset susceptibility of SOI SRAMs

Impact of temperature on single event upset measurement by heavy ions in SRAM devices

Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies

Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect

Simulation of the characteristics of low-energy proton induced single event upset

Supply voltage dependence of single event upset sensitivity in diverse SRAM devices