The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs - 铁电器件课题组（王晓磊） | LabXing

array(2) { ["lab"]=> string(4) "1352" ["publication"]=> string(5) "12162" } The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs - 铁电器件课题组（王晓磊） | LabXing

铁电器件课题组（王晓磊）

简介半导体存储器件

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The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs

2021

期刊 IEEE Transactions on Electron Devices

作者 Xiaoqing Sun · Yuanyuan Zhang · Jinjuan Xiang · Kai Han · Xiaolei Wang · Wenwu Wang · Tianchun Ye

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页码 1-6
Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0018-9383
DOI: 10.1109/ted.2021.3097008

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