Rectification Ratio and Tunneling Decay Coefficient Depend on the Contact Geometry Revealed by in Situ Imaging of the Formation of EGaIn Junctions - Molecular electronics & Nanophotonics | LabXing

array(2) { ["lab"]=> string(4) "1364" ["publication"]=> string(5) "12017" } Rectification Ratio and Tunneling Decay Coefficient Depend on the Contact Geometry Revealed by in Situ Imaging of the Formation of EGaIn Junctions - Molecular electronics & Nanophotonics | LabXing

Molecular electronics & Nanophotonics

简介 Functional molecular synthesis, molecular electronic devices, EGaIn technique

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Rectification Ratio and Tunneling Decay Coefficient Depend on the Contact Geometry Revealed by in Situ Imaging of the Formation of EGaIn Junctions

2019

期刊 ACS Applied Materials & Interfaces

作者 Xiaoping Chen · Hongting Hu · Jorge Trasobares · Christian A. Nijhuis

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卷 11
期 23
页码 21018-21029
American Chemical Society (ACS)
ISSN: 1944-8244
DOI: 10.1021/acsami.9b02033

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