array(2) { ["lab"]=> string(4) "1519" ["publication"]=> string(5) "14073" } Sliding ferroelectricity in two-dimensional MoA2N4 (A = Si or Ge) bilayers: high polarizations and Moiré potentials - 计算物理课题组 | LabXing

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Sliding ferroelectricity in two-dimensional MoA2N4 (A = Si or Ge) bilayers: high polarizations and Moiré potentials

2021
期刊 Journal of Materials Chemistry A
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Strong sliding-ferroelectricity is predicted in high-mobility semiconducting MoSi2N4 bilayers, and a small angle twist will induce strong Moiré potential and unique band alignment for exciton trapping.

  • 卷 9
  • 期 35
  • 页码 19659-19663
  • Royal Society of Chemistry (RSC)
  • ISSN: 2050-7488
  • DOI: 10.1039/d1ta02645c