Photocurrents in GaN-based HEMTs: Theoretical model and experimental results

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "13951" } Photocurrents in GaN-based HEMTs: Theoretical model and experimental results - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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2019

期刊 Applied Physics Letters

作者 X. Zheng · S. Feng · X. Li · Y Zhang · K. Bai

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卷 115
期 21
页码 213505
AIP Publishing
ISSN: 0003-6951
DOI: 10.1063/1.5128825

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