Evaluation of the Schottky Contact Degradation on the Temperature Transient Measurements in GaN HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6232" } Evaluation of the Schottky Contact Degradation on the Temperature Transient Measurements in GaN HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

关注

Evaluation of the Schottky Contact Degradation on the Temperature Transient Measurements in GaN HEMTs

2018

期刊 IEEE Transactions on Electron Devices

作者 Xiang Zheng · Shiwei Feng · Yamin Zhang · Jingwei Li

下载全文

卷 65
期 5
页码 1734-1738
Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0018-9383
DOI: 10.1109/ted.2018.2812798

LabXing 上可以免费创建课题组网站