array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6249" } Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

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大学 北京工业大学 / 信息学部
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Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography

2014
期刊 IEEE Transactions on Device and Materials Reliability
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  • 卷 14
  • 期 1
  • 页码 413-417
  • Institute of Electrical and Electronics Engineers (IEEE)
  • ISSN: 1530-4388
  • DOI: 10.1109/tdmr.2013.2279253
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