array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6275" } Failure Mechanism of Phosphor Layer for High-Power GaN-Based White-LED - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

大学 北京工业大学 / 信息学部
关注
分享到

Failure Mechanism of Phosphor Layer for High-Power GaN-Based White-LED

2012
期刊 Laser & Optoelectronics Progress
下载全文
  • 卷 49
  • 期 10
  • 页码 102302
  • Shanghai Institute of Optics and Fine Mechanics
  • ISSN: 1006-4125
  • DOI: 10.3788/lop49.102302
LabXing 上可以免费创建课题组网站
© LabXing 2018 关于LabXing 帮助中心 testing.service 京公网安备11010802025734号