array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6291" } High-Temperature Characteristics of Ti/Al/Ni/Au Ohmic Contacts to n-GaN - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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High-Temperature Characteristics of Ti/Al/Ni/Au Ohmic Contacts to n-GaN

2008
期刊 Chinese Physics Letters
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