array(2) { ["lab"]=> string(3) "879" ["publication"]=> string(4) "6519" } Observation of persistent photoconductance in ZnO nanotube - 师文生 课题组 | LabXing

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简介 应用光电纳米材料与器件

大学 中国科学院理化技术研究所 / 光电信息材料与器件
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Observation of persistent photoconductance in ZnO nanotube

2009
期刊 Applied Physics Letters
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Vertically aligned ZnO nanotube fabricated on an indium tin oxide substrate is found to exhibit strong persistent photoconductivity (PPC). Excitation wavelength-dependent conductance measurement on individual ZnO nanotube reveals the presence of defect states at 240 meV above the valence band edge, which are directly associated with the PPC effect. Our observations are consistent with the hypothesis that double ionization of defect-localized states is responsible for the PPC effect.

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