array(2) { ["lab"]=> string(3) "879" ["publication"]=> string(4) "6526" } Using Si and Ge Nanostructures as Substrates for Surface-Enhanced Raman Scattering Based on Photoinduced Charge Transfer Mechanism - 师文生 课题组 | LabXing

师文生 课题组

简介 应用光电纳米材料与器件

大学 中国科学院理化技术研究所 / 光电信息材料与器件
关注
分享到

Using Si and Ge Nanostructures as Substrates for Surface-Enhanced Raman Scattering Based on Photoinduced Charge Transfer Mechanism

2011
期刊 Journal of the American Chemical Society
下载全文
The possibility of utilizing the Si and Ge nanostructures to promote surface-enhanced Raman scattering (SERS) is discussed. The vibronic coupling of the conduction band and valence band states of Si or Ge with the excited and ground states of the target molecule during the charge transfer (CT) process could enhance the molecular polarizability tensor. Using H-terminated silicon nanowire (H-SiNW) and germanium nanotube (H-GeNT) arrays as substrates, significant Raman enhancement of the standard probes, Rodamine 6G (R6G), dye (Bu4N)2[Ru(dcbpyH)2-(NCS)2] (N719), and 4-aminothiophenol (PATP), are demonstrated. The abundant hydrogen atoms terminated on the surface of SiNW and GeNT arrays play a critical role in promoting efficient CT and enable the SERS effect.

  • 卷 133
  • 期 41
  • 页码 16518-16523
  • American Chemical Society (ACS)
  • ISSN: 0002-7863
  • DOI: 10.1021/ja2057874
LabXing 上可以免费创建课题组网站
© LabXing 2018 关于LabXing 帮助中心 testing.service 京公网安备11010802025734号