#Bangbing Shi

Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Variation of Dominant Degradation Mechanism in AlGaN Barrier Layer With Different Voltage Stress on the Gate of AlGaN/GaN High Electron Mobility Transistors

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Temperature distribution measurement based on field-programmable gate array embedded ring oscillators

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

LabXing 上可以免费创建课题组网站