首页
(current)
大学
论文
新闻
招聘
FAQ
简体中文
中
En
登录
注册
#Shiwei Feng
Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors under Reverse Pulse Electrical Stress Using the Voltage-Transient Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Measuring Double-Sided Thermal Resistance of Press-Pack IGBT Modules Based on Ratio of Double-Sided Heat Dissipation
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A numerical calibration of structure-function transient thermal measurement based on Cauer RC network
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
«
1
2
»