Valence-State Controllable Fabrication of Cu2–xO/Si Type-II Heterojunction for High-Performance Photodetectors - 麦文杰教授实验组 | LabXing

array(2) { ["lab"]=> string(3) "544" ["publication"]=> string(4) "8030" } Valence-State Controllable Fabrication of Cu2–xO/Si Type-II Heterojunction for High-Performance Photodetectors - 麦文杰教授实验组 | LabXing

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简介纳米能源转换与存储材料

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Valence-State Controllable Fabrication of Cu2–xO/Si Type-II Heterojunction for High-Performance Photodetectors

2019

期刊 ACS Applied Materials & Interfaces

作者 Yujin Liu · Jundong Zhu · Guobiao Cen · Jingbo Zheng · Dawei Xie · Zhijuan Zhao · Chuanxi Zhao · Wenjie Mai

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卷 11
期 46
页码 43376-43382
American Chemical Society (ACS)
ISSN: 1944-8244
DOI: 10.1021/acsami.9b15727

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