Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si₀ٜ₄₅Ge₀ٜ₅₅, Ge Gate-All-Around NSFET for 5nm Technology Node - 微电子所鸿之微集成电路联合计算实验室 | LabXing

array(2) { ["lab"]=> string(3) "601" ["publication"]=> string(4) "3567" } Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si₀ٜ₄₅Ge₀ٜ₅₅, Ge Gate-All-Around NSFET for 5nm Technology Node - 微电子所鸿之微集成电路联合计算实验室 | LabXing

微电子所鸿之微集成电路联合计算实验室

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Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si₀ٜ₄₅Ge₀ٜ₅₅, Ge Gate-All-Around NSFET for 5nm Technology Node

2018

期刊 IEEE Journal of the Electron Devices Society

作者 Jiaxin Yao · Jun Li · Kun Luo · Jiahan Yu · Qingzhu Zhang · Zhaozhao Hou · Jie Gu · Wen Yang · Zhenhua Wu · Huaxiang Yin · Wenwu Wang

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页码 1-1
Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 2168-6734
DOI: 10.1109/jeds.2018.2858225

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