#Wenwu Wang

Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si₀ٜ₄₅Ge₀ٜ₅₅, Ge Gate-All-Around NSFET for 5nm Technology Node

微电子所鸿之微集成电路联合计算实验室 , 中国科学院微电子研究所

Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process

微电子所鸿之微集成电路联合计算实验室 , 中国科学院微电子研究所

Understanding dipole formation at dielectric/dielectric hetero-interface

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3gate dielectrics

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Comprehensive investigation of the interfacial charges and dipole in GeO x /Al2O3 gate stacks of Ge MOS capacitor by postdeposition annealing

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Identification of interfacial defects in a Ge gate stack based on ozone passivation

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Band alignment of HfO2 on SiO2/Si structure

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Reexamination of band offset transitivity employing oxide heterojunctions

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

A possible origin of core-level shift in SiO2/Si stacks

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Experimental estimation of charge neutrality level of SiO2

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Investigation on the dominant key to achieve superior Ge surface passivation by GeO based on the ozone oxidation

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Experimental investigation on oxidation kinetics of germanium by ozone

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Investigation of spatial charge distribution and electrical dipole in atomic layer deposited Al2O3on 4H-SiC

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

On the applicability of Gibbs free energy landscape to the definition and understanding of transient negative capacitance in a ferroelectric capacitor

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Electron mobility in silicon nanowires using nonlinear surface roughness scattering model

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO2Dielectric Using TaCl5and TEA as Precursors

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOxgate stacks in bulk Ge pMOSFET with GeOxgrown by ozone oxidation

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/HfₓZr₁₋ₓO₂/Interlayer/Si (MFIS) Gate Structure

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Depolarization Field in FeFET Considering Minor Loop Operation and Charge Trapping

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Experimental investigation on dipole and band offset affected by charge neutrality level modulation

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) gate structure

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf$_\text{0.5}$Zr$_\text{0.5}$O$_\text{2}$/SiO$_{\textit{x}}$/Si (MFIS) Gate Structure During Endurance Fatigue

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

#Wenwu Wang

Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si₀ٜ₄₅Ge₀ٜ₅₅, Ge Gate-All-Around NSFET for 5nm Technology Node

Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process

Understanding dipole formation at dielectric/dielectric hetero-interface

Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3gate dielectrics

Comprehensive investigation of the interfacial charges and dipole in GeO x /Al2O3 gate stacks of Ge MOS capacitor by postdeposition annealing

Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs

Identification of interfacial defects in a Ge gate stack based on ozone passivation

Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device

Band alignment of HfO2 on SiO2/Si structure

Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack

Reexamination of band offset transitivity employing oxide heterojunctions

A possible origin of core-level shift in SiO2/Si stacks

Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure

Experimental estimation of charge neutrality level of SiO2

Investigation on the dominant key to achieve superior Ge surface passivation by GeO based on the ozone oxidation

Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation

Experimental investigation on oxidation kinetics of germanium by ozone

Investigation of spatial charge distribution and electrical dipole in atomic layer deposited Al2O3on 4H-SiC

On the applicability of Gibbs free energy landscape to the definition and understanding of transient negative capacitance in a ferroelectric capacitor

Electron mobility in silicon nanowires using nonlinear surface roughness scattering model

Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO2Dielectric Using TaCl5and TEA as Precursors

Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOxgate stacks in bulk Ge pMOSFET with GeOxgrown by ozone oxidation

Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/HfₓZr₁₋ₓO₂/Interlayer/Si (MFIS) Gate Structure

Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs

Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

Depolarization Field in FeFET Considering Minor Loop Operation and Charge Trapping

Experimental investigation on dipole and band offset affected by charge neutrality level modulation

Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/SiO<sub>x</sub>/Si (MFIS) gate structure

Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf$_\text{0.5}$Zr$_\text{0.5}$O$_\text{2}$/SiO$_{\textit{x}}$/Si (MFIS) Gate Structure During Endurance Fatigue