Identification of interfacial defects in a Ge gate stack based on ozone passivation - 铁电器件课题组（王晓磊） | LabXing

array(2) { ["lab"]=> string(4) "1352" ["publication"]=> string(5) "11872" } Identification of interfacial defects in a Ge gate stack based on ozone passivation - 铁电器件课题组（王晓磊） | LabXing

铁电器件课题组（王晓磊）

简介半导体存储器件

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Identification of interfacial defects in a Ge gate stack based on ozone passivation

2018

期刊 Semiconductor Science and Technology

作者 Lixing Zhou · Xiaolei Wang · Xueli Ma · Kai Han · Yanrong Wang · Jinjuan Xiang · Hong Yang · Jing Zhang · Chao Zhao · Tianchun Ye · Wenwu Wang

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卷 33
期 11
页码 115005
IOP Publishing
ISSN: 0268-1242
DOI: 10.1088/1361-6641/aae006

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