铁电器件课题组（王晓磊）

Depolarization Field in FeFET Considering Minor Loop Operation and Charge Trapping

2022

期刊 IEEE Transactions on Electron Devices

作者 Xinpei Jia · Jinjuan Xiang · Hao Xu · Wenjun Liu · Xiaolei Wang · Wenwu Wang

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

2022

期刊 IEEE Transactions on Electron Devices

作者 Shujing Zhao · Fengbin Tian · Hao Xu · Jinjuan Xiang · Tingting Li · Junshuai Chai · Jiahui Duan · Kai Han · Xiaolei Wang · Wenwu Wang · Tianchun Ye

Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) gate structure

2022

期刊 Journal of Applied Physics

作者 Jiahui Duan · Hao Xu · Shujing Zhao · Fengbin Tian · Jinjuan Xiang · Kai Han · Tingting Li · Xiaolei Wang · Wenwu Wang · Tianchun Ye

Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf$_\text{0.5}$Zr$_\text{0.5}$O$_\text{2}$/SiO$_{\textit{x}}$/Si (MFIS) Gate Structure During Endurance Fatigue

2022

期刊 IEEE Transactions on Electron Devices

作者 Jiahui Duan · Shujing Zhao · Fengbin Tian · Jinjuan Xiang · Kai Han · Tingting Li · Hao Xu · Xiaolei Wang · Wenwu Wang · Tianchun Ye

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/HfₓZr₁₋ₓO₂/Interlayer/Si (MFIS) Gate Structure

2021

期刊 IEEE Transactions on Electron Devices

作者 Fengbin Tian · Shujing Zhao · Hao Xu · Jinjuan Xiang · Tingting Li · Wenjuan Xiong · Jiahui Duan · Junshuai Chai · Kai Han · Xiaolei Wang · Wenwu Wang · Tianchun Ye

The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs

2021

期刊 IEEE Transactions on Electron Devices

作者 Xiaoqing Sun · Yuanyuan Zhang · Jinjuan Xiang · Kai Han · Xiaolei Wang · Wenwu Wang · Tianchun Ye

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

2021

期刊 Applied Physics Letters

作者 Yuanyuan Zhang · Xiaoqing Sun · Junshuai Chai · Hao Xu · Xueli Ma · Jinjuan Xiang · Kai Han · Xiaolei Wang · Wenwu Wang · Tianchun Ye

Electron mobility in silicon nanowires using nonlinear surface roughness scattering model

2020

期刊 Japanese Journal of Applied Physics

作者 Jiahui Duan · Jinjuan Xiang · Lixing Zhou · Xiaolei Wang · Xueli Ma · Wenwu Wang

Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack

2020

期刊 IEEE Transactions on Electron Devices

作者 Xiaolei Wang · Xiaoqing Sun · Yuanyuan Zhang · Lixing Zhou · Jinjuan Xiang · Xueli Ma · Hong Yang · Yongliang Li · Kai Han · Jun Luo · Chao Zhao · Wenwu Wang

On the applicability of Gibbs free energy landscape to the definition and understanding of transient negative capacitance in a ferroelectric capacitor

2020

期刊 Journal of Physics D: Applied Physics

作者 Yuanyuan Zhang · Xueli Ma · Xiaolei Wang · Kai Han · Jinjuan Xiang · Wenwu Wang

Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs

2019

期刊 Semiconductor Science and Technology

作者 Kai Han · Xiaolei Wang · Jinjuan Xiang · Lixing Zhou · Jiazhen Zhang · Yanrong Wang · Xueli Ma · Hong Yang · Jing Zhang · Chao Zhao · Tianchun Ye · Wenwu Wang

Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences

2019

期刊 IEEE Transactions on Electron Devices

作者 Lixing Zhou · Xiaolei Wang · Kai Han · Xueli Ma · Yanrong Wang · Jinjuan Xiang · Hong Yang · Jing Zhang · Chao Zhao · Tianchun Ye · Wenwu Wang

Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation

2019

期刊 Applied Surface Science

作者 Xueli Ma · Lixing Zhou · Jinjuan Xiang · Hong Yang · Xiaolei Wang · Yongliang Li · Jing Zhang · Chao Zhao · Huaxiang Yin · Wenwu Wang · Tianchun Ye

Comprehensive investigation of the interfacial charges and dipole in GeO x /Al2O3 gate stacks of Ge MOS capacitor by postdeposition annealing

2018

期刊 Japanese Journal of Applied Physics

作者 Lixing Zhou · Xiaolei Wang · Xueli Ma · Kai Han · Yanrong Wang · Jinjuan Xiang · Hong Yang · Jing Zhang · Chao Zhao · Tianchun Ye · Wenwu Wang

Identification of interfacial defects in a Ge gate stack based on ozone passivation

2018

期刊 Semiconductor Science and Technology

作者 Lixing Zhou · Xiaolei Wang · Xueli Ma · Kai Han · Yanrong Wang · Jinjuan Xiang · Hong Yang · Jing Zhang · Chao Zhao · Tianchun Ye · Wenwu Wang

Understanding dipole formation at dielectric/dielectric hetero-interface

2018

期刊 Applied Physics Letters

作者 Lixing Zhou · Xiaolei Wang · Kai Han · Xueli Ma · Yanrong Wang · Jinjuan Xiang · Hong Yang · Jing Zhang · Chao Zhao · Tianchun Ye · Henry H. Radamson · Wenwu Wang

Experimental estimation of charge neutrality level of SiO2

2017

期刊 Applied Surface Science

作者 Jing Zhang · Shuhua Wei · Xiaolei Wang · Jinjuan Xiang · Wenwu Wang

Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOxgate stacks in bulk Ge pMOSFET with GeOxgrown by ozone oxidation

2017

期刊 Journal of Physics D: Applied Physics

作者 Lixing Zhou · Xiaolei Wang · Xueli Ma · Jinjuan Xiang · Hong Yang · Chao Zhao · Tianchun Ye · Wenwu Wang

Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs

2017

期刊 IEEE Transactions on Electron Devices

作者 Xiaolei Wang · Jinjuan Xiang · Kai Han · Shengkai Wang · Jun Luo · Chao Zhao · Tianchun Ye · Henry H. Radamson · Eddy Simoen · Wenwu Wang

Experimental investigation on oxidation kinetics of germanium by ozone

2016

期刊 Applied Surface Science

作者 Xiaolei Wang · Zhiqian Zhao · Jinjuan Xiang · Wenwu Wang · Jing Zhang · Chao Zhao · Tianchun Ye

Investigation of spatial charge distribution and electrical dipole in atomic layer deposited Al2O3on 4H-SiC

2016

期刊 Journal of Physics D: Applied Physics

作者 Kai Han · Xiaolei Wang · Li Yuan · Wenwu Wang

Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO2Dielectric Using TaCl5and TEA as Precursors

2016

期刊 ECS Journal of Solid State Science and Technology

作者 Jinjuan Xiang · Xiaolei Wang · Tingting Li · Jianfeng Gao · Kai Han · Jiahan Yu · Wenwu Wang · Junfeng Li · Chao Zhao

Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3gate dielectrics

2016

期刊 Journal of Physics D: Applied Physics

作者 Xiaolei Wang · Jinjuan Xiang · Shengkai Wang · Wenwu Wang · Chao Zhao · Tianchun Ye · Yuhua Xiong · Jing Zhang

Investigation on the dominant key to achieve superior Ge surface passivation by GeO based on the ozone oxidation

2015

期刊 Applied Surface Science

作者 Xiaolei Wang · Jinjuan Xiang · Wenwu Wang · Yuhua Xiong · Jing Zhang · Chao Zhao

A possible origin of core-level shift in SiO2/Si stacks

2013

期刊 Applied Physics Letters

作者 Xiaolei Wang · Jinjuan Xiang · Wenwu Wang · Jing Zhang · Kai Han · Hong Yang · Xueli Ma · Chao Zhao · Dapeng Chen · Tianchun Ye

Reexamination of band offset transitivity employing oxide heterojunctions

2013

期刊 Applied Physics Letters

作者 Xiaolei Wang · Jinjuan Xiang · Wenwu Wang · Jing Zhang · Kai Han · Hong Yang · Xueli Ma · Chao Zhao · Dapeng Chen · Tianchun Ye

Band alignment of HfO2 on SiO2/Si structure

2012

期刊 Applied Physics Letters

作者 Xiaolei Wang · Kai Han · Wenwu Wang · Jinjuan Xiang · Hong Yang · Jing Zhang · Xueli Ma · Chao Zhao · Dapeng Chen · Tianchun Ye

Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack

2012

期刊 Applied Physics Letters

作者 Xiaolei Wang · Kai Han · Wenwu Wang · Hong Yang · Jing Zhang · Xueli Ma · Jinjuan Xiang · Dapeng Chen · Tianchun Ye

Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device

2010

期刊 Applied Physics Letters

作者 Xiaolei Wang · Kai Han · Wenwu Wang · Xueli Ma · Dapeng Chen · Jing Zhang · Jun Du · Yuhua Xiong · Anping Huang

Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure

2010

期刊 Applied Physics Letters

作者 Xiaolei Wang · Kai Han · Wenwu Wang · Shijie Chen · Xueli Ma · Dapeng Chen · Jing Zhang · Jun Du · Yuhua Xiong · Anping Huang

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Depolarization Field in FeFET Considering Minor Loop Operation and Charge Trapping

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/SiO<sub>x</sub>/Si (MFIS) gate structure

Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf$_\text{0.5}$Zr$_\text{0.5}$O$_\text{2}$/SiO$_{\textit{x}}$/Si (MFIS) Gate Structure During Endurance Fatigue

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/HfₓZr₁₋ₓO₂/Interlayer/Si (MFIS) Gate Structure

The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

Electron mobility in silicon nanowires using nonlinear surface roughness scattering model

Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack

On the applicability of Gibbs free energy landscape to the definition and understanding of transient negative capacitance in a ferroelectric capacitor

Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs

Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences

Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation

Comprehensive investigation of the interfacial charges and dipole in GeO x /Al2O3 gate stacks of Ge MOS capacitor by postdeposition annealing

Identification of interfacial defects in a Ge gate stack based on ozone passivation

Understanding dipole formation at dielectric/dielectric hetero-interface

Experimental estimation of charge neutrality level of SiO2

Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOxgate stacks in bulk Ge pMOSFET with GeOxgrown by ozone oxidation

Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs

Experimental investigation on oxidation kinetics of germanium by ozone

Investigation of spatial charge distribution and electrical dipole in atomic layer deposited Al2O3on 4H-SiC

Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO2Dielectric Using TaCl5and TEA as Precursors

Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3gate dielectrics

Investigation on the dominant key to achieve superior Ge surface passivation by GeO based on the ozone oxidation

A possible origin of core-level shift in SiO2/Si stacks

Reexamination of band offset transitivity employing oxide heterojunctions

Band alignment of HfO2 on SiO2/Si structure

Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack

Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device

Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure