array(2) { ["lab"]=> string(4) "1352" ["publication"]=> string(5) "11870" } Comprehensive investigation of the interfacial charges and dipole in GeO x /Al2O3 gate stacks of Ge MOS capacitor by postdeposition annealing - 铁电器件课题组(王晓磊) | LabXing

Comprehensive investigation of the interfacial charges and dipole in GeO x /Al2O3 gate stacks of Ge MOS capacitor by postdeposition annealing

2018
期刊 Japanese Journal of Applied Physics
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