#Jiahui Duan

Electron mobility in silicon nanowires using nonlinear surface roughness scattering model

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/HfₓZr₁₋ₓO₂/Interlayer/Si (MFIS) Gate Structure

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/SiO<sub>x</sub>/Si (MFIS) gate structure

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf$_\text{0.5}$Zr$_\text{0.5}$O$_\text{2}$/SiO$_{\textit{x}}$/Si (MFIS) Gate Structure During Endurance Fatigue

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

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