Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf$_\text{0.5}$Zr$_\text{0.5}$O$_\text{2}$/SiO$_{\textit{x}}$/Si (MFIS) Gate Structure During Endurance Fatigue - 铁电器件课题组（王晓磊） | LabXing

array(2) { ["lab"]=> string(4) "1352" ["publication"]=> string(5) "15062" } Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf$_\text{0.5}$Zr$_\text{0.5}$O$_\text{2}$/SiO$_{\textit{x}}$/Si (MFIS) Gate Structure During Endurance Fatigue - 铁电器件课题组（王晓磊） | LabXing

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简介半导体存储器件

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Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf$_\text{0.5}$Zr$_\text{0.5}$O$_\text{2}$/SiO$_{\textit{x}}$/Si (MFIS) Gate Structure During Endurance Fatigue

2022

期刊 IEEE Transactions on Electron Devices

作者 Jiahui Duan · Shujing Zhao · Fengbin Tian · Jinjuan Xiang · Kai Han · Tingting Li · Hao Xu · Xiaolei Wang · Wenwu Wang · Tianchun Ye

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页码 1-5
Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0018-9383
DOI: 10.1109/ted.2022.3215935

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