array(2) { ["lab"]=> string(4) "1352" ["publication"]=> string(5) "15061" } Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/SiO<sub>x</sub>/Si (MFIS) gate structure - 铁电器件课题组（王晓磊） | LabXing

铁电器件课题组（王晓磊）

简介 半导体存储器件

大学 中国科学院微电子研究所 / 集成电路先导工艺研发中心
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Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/SiO<sub>x</sub>/Si (MFIS) gate structure

2022
期刊 Journal of Applied Physics
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This work investigates the impact of mobility degradation on endurance fatigue of a ferroelectric field-effect-transistor (FeFET) with the TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) gate structure. We use the split capacitance–voltage ( C– V) method to study the carrier mobility during the program/erase cycling. We find that significant mobility degradation occurs with increasing program/erase cycle and further deteriorates endurance characteristics. Our work provides mobility degradation as another endurance fatigue factor of FeFET besides charge trapping and trap generation, which is helpful for endurance improvement.

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