首页
(current)
大学
论文
新闻
招聘
FAQ
简体中文
中
En
登录
注册
#Anping Huang
Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device
铁电器件课题组(王晓磊) , 中国科学院微电子研究所
Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure
铁电器件课题组(王晓磊) , 中国科学院微电子研究所