Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure - 铁电器件课题组（王晓磊） | LabXing

array(2) { ["lab"]=> string(4) "1352" ["publication"]=> string(5) "11879" } Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure - 铁电器件课题组（王晓磊） | LabXing

铁电器件课题组（王晓磊）

简介半导体存储器件

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Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure

2010

期刊 Applied Physics Letters

作者 Xiaolei Wang · Kai Han · Wenwu Wang · Shijie Chen · Xueli Ma · Dapeng Chen · Jing Zhang · Jun Du · Yuhua Xiong · Anping Huang

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卷 96
期 15
页码 152907
AIP Publishing
ISSN: 0003-6951
DOI: 10.1063/1.3399359

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