Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure - 微电子所鸿之微集成电路联合计算实验室 | LabXing

array(2) { ["lab"]=> string(3) "601" ["publication"]=> string(4) "3573" } Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure - 微电子所鸿之微集成电路联合计算实验室 | LabXing

微电子所鸿之微集成电路联合计算实验室

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Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure

2017

期刊 ECS Journal of Solid State Science and Technology

作者 Zhaozhao Hou · Qingzhu Zhang · Huaxiang Yin · Jinjuan Xiang · Changliang Qin · Jiaxin Yao · Jie Gu

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卷 6
期 10
页码 Q136-Q142
The Electrochemical Society
ISSN: 2162-8769
DOI: 10.1149/2.0251710jss

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