Monitoring of defects creation sequence in 808 nm laser diode by reflectance analysis

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "12332" } Monitoring of defects creation sequence in 808 nm laser diode by reflectance analysis - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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2020

期刊 Microelectronics Reliability

作者 Tieying Hao · Shiwei Feng · Xiang Zheng · Kun Bai

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卷 110
页码 113639
Elsevier BV
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2020.113639

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