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#Shiwei Feng
A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A voltage-transient method for characterizing traps in GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of post-deposition annealing pressure on bipolar resistive switching in RF sputtered BiFeO<inf>3</inf>/Nb:SrTiO<inf>3</inf> heterostructure
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A current-transient method for identifying the spatial positions of traps in GaN-based HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Substrate thinning and external stress effect on the output characteristics of AlGaN/GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Fatigue behavior of resistive switching in a BiFeO3 thin film
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A current transient method for trap analysis in BiFeO3 thin films
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Evaluation of the Schottky Contact Degradation on the Temperature Transient Measurements in GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Optimized thermal sensor allocation for field-programmable gate array temperature measurements based on self-heating test
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Study of Heat Transport Behavior in GaN-Based Transistors by Schottky Characteristics Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of poling process on resistive switching in Au/BiFeO3/SrRuO3 structures
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal time-constant spectrum extraction method in AlGaN/GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Mechanism of the self-changing parameters and characteristics in AlGaN/GaN high-electron mobility transistors after a step voltage stress
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Degradation Analysis of Facet Coating in GaAs-Based High-Power Laser Diodes
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
The research on temperature distribution of GaN-based blue laser diode
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal investigation of LED array with multiple packages based on the superposition method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Variation of Dominant Degradation Mechanism in AlGaN Barrier Layer With Different Voltage Stress on the Gate of AlGaN/GaN High Electron Mobility Transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Measuring temperature in GaN-based high electron mobility transistors by cathodoluminescence spectroscopy
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Evaluation of the drain—source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Cycled Thermomechanical Failure in 808-nm High-Power AlGaAs/GaAs Laser Diode Bars
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Transient thermal characteristics related to catastrophic optical damage in high power AlGaAs/GaAs laser diodes
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Quick screen of thermal resistance for batching high brightness LEDs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identifying the Traps in the Channel Region in GaN-based HEMTs Using a Nonmonotone Drain Current Transient
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
The channel temperature dependence of drain transient response in AlGaN/GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
The thermal characterization of packaged semiconductor device
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identifying the failure mechanism in accelerated life tests by two-parameter lognormal distributions
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A Method of Thermal Analysis for CMOS Integrated Circuit
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal Fatigue Characteristics of Die Attach Materials for Packaged High-Brightness LEDs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Determination of Thermal Fatigue Delamination of Die Attach Materials for High-Brightness LEDs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal analysis in high power GaAs-based laser diodes
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal resistance analysis related to the degradation of GaAs-Based laser diodes
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal Analysis of GaAs-Based High Power Laser Diodes Related to Degradation
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal stability evaluation of die attach for high brightness LEDs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Analysis of junction temperatures in high-power GaN-based LEDs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Determination of channel temperature of AlGaN/GaN HEMT by electrical method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal analysis of high power LED array system
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal Analysis of the Multi-Chip Vertical Packaged White LED
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Interface states mediated reverse leakage through metal/AlxGa1−xN∕GaN Schottky diodes
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
The study on the thermal behavior of packaged power LEDs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A New Method for Measuring Thermal Characteristics of Multistage Depressed Collectors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A new method for detecting heteromorphic workpiece brazing layer quality based on thermal probe
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Build-in compact and efficient temperature sensor array on field programmable gate array
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effects of temperature and bias voltage on electron transport properties in GaN highelectron-mobility transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Monitoring of defects creation sequence in 808 nm laser diode by reflectance analysis
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Transient and long-term catastrophic optical damage in high power AlGaAs/GaAs laser diodes
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Low-cost reconfigurable temperature sensor array on field programmable gate array
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Non-destructive testing of heteromorphic workpiece brazing layer quality based on heat conduction
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
The study of temperature-dependent degradation of optical output on 808 nm GaAs-Based High-Power Laser Diode Bars
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of Uniaxial Tensile Strains at Different Orientations on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Research on transient thermal behavior of semiconductor lasers under pulse current excitation by thermoreflection technique
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Nondestructive Measurement for Front Facet Temperature of Semiconductor Lasers
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Implementation of Fast Measurement System of Semiconductor Device Parameter Temperature Coefficient Based on FPGA
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Research on temperatures located within facet coating layers along z-axis of semiconductor lasers
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of Surface Roughness on Thermal Contact Resistance of Fixed Interface in Thermal Measurement of Electron Device
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Study of traps in low-temperature polysilicon thin film transistors using a current transient method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Real-time measurement and control of junction temperature of VDMOS in power cycle test
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal analysis of ICs based on equivalent thermal resistance
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Structure optimization of heat sink for high power LED street lamp
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Analysis of degradation of GaN-Based light-emitting diodes
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal analysis of ICS based on equivalent thermal resistance and skill language
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Reliability of solder joints in High-power LED package in power cycling tests
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
The investigation of failure mechanism of n-GaN/Ti/Al/Ni/Au ohmic contact by novel TLM
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Experimental investigation on dipole and band offset affected by charge neutrality level modulation
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Study of the temperature distribution in insulated gate bipolar transistor module under different test conditions
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Influence of heat source size on thermal resistance of AlGaN/GaN HEMT
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
The thermal properties of AlGaAs/GaAs laser diode bars analyzed by the transient thermal technique
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Rapid test method for thermal characteristics of semiconductor devices
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal analysis of multiple light sources based on the superposition method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
B13-P-01Temperature Characterization of Self-heating in GaN-based Transistors by Cathodeluminescence Spectroscopy
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Temperature distribution measurement based on field-programmable gate array embedded ring oscillators
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Analysis of the hybrid trapping effect in GaN HEMTS based on the current transient spectroscopy
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Measurement Deviation of the Virtual Junction Temperature by the Saturation Voltage Drop Method for Insulated-Gate Bipolar Transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effects of Static and Repetitive Uniaxial Bending Strains on the Electrical Properties and Trap Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Trap Characterization of Trench-Gate SiC MOSFETs based on Transient Drain Current
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
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