Effect of post-deposition annealing pressure on bipolar resistive switching in RF sputtered BiFeO<inf>3</inf>/Nb:SrTiO<inf>3</inf> heterostructure - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6222" } Effect of post-deposition annealing pressure on bipolar resistive switching in RF sputtered BiFeO<inf>3</inf>/Nb:SrTiO<inf>3</inf> heterostructure - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Effect of post-deposition annealing pressure on bipolar resistive switching in RF sputtered BiFeO<inf>3</inf>/Nb:SrTiO<inf>3</inf> heterostructure

2018

会议 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者 Ying Yang · Hui Zhu · Xiao Meng · Lei Jin · Chen Wang · Si Wang · Shiwei Feng · Chunsheng Guo · Yamin Zhang

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IEEE
ISBN: 9781538644409
DOI: 10.1109/icsict.2018.8564947

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