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#Yamin Zhang
A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A voltage-transient method for characterizing traps in GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of post-deposition annealing pressure on bipolar resistive switching in RF sputtered BiFeO<inf>3</inf>/Nb:SrTiO<inf>3</inf> heterostructure
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A current-transient method for identifying the spatial positions of traps in GaN-based HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Substrate thinning and external stress effect on the output characteristics of AlGaN/GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Evaluation of the Schottky Contact Degradation on the Temperature Transient Measurements in GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Optimized thermal sensor allocation for field-programmable gate array temperature measurements based on self-heating test
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Study of Heat Transport Behavior in GaN-Based Transistors by Schottky Characteristics Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Mechanism of the self-changing parameters and characteristics in AlGaN/GaN high-electron mobility transistors after a step voltage stress
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal investigation of LED array with multiple packages based on the superposition method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Variation of Dominant Degradation Mechanism in AlGaN Barrier Layer With Different Voltage Stress on the Gate of AlGaN/GaN High Electron Mobility Transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Measuring temperature in GaN-based high electron mobility transistors by cathodoluminescence spectroscopy
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Evaluation of the drain—source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identifying the Traps in the Channel Region in GaN-based HEMTs Using a Nonmonotone Drain Current Transient
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
The channel temperature dependence of drain transient response in AlGaN/GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A New Method for Measuring Thermal Characteristics of Multistage Depressed Collectors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Fast and stable K-ion storage enabled by synergistic interlayer and pore-structure engineering
慈立杰课题组 , 哈尔滨工业大学（深圳）
Foldable potassium-ion batteries enabled by free-standing and flexible SnS 2@ C nanofibers
慈立杰课题组 , 哈尔滨工业大学（深圳）
Hierarchically porous carbon supported Sn4P3 as a superior anode material for potassium-ion batteries
慈立杰课题组 , 哈尔滨工业大学（深圳）
Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A new method for detecting heteromorphic workpiece brazing layer quality based on thermal probe
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of Uniaxial Tensile Strains at Different Orientations on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Surface‐Confined SnS 2 @C@rGO as High‐Performance Anode Materials for Sodium‐ and Potassium‐Ion Batteries
慈立杰课题组 , 哈尔滨工业大学（深圳）
Ultrathin carbon nanosheets for highly efficient capacitive K-ion and Zn-ion storage
慈立杰课题组 , 哈尔滨工业大学（深圳）
Foldable potassium-ion batteries enabled by free-standing and flexible SnS2@C nanofibers
慈立杰课题组 , 哈尔滨工业大学（深圳）
Enhanced Electrochemical Performance of Li 1.2 [Mn 0.54 Co 0.13 Ni 0.13 ]O 2 Enabled by Synergistic Effect of Li 1.5 Na 0.5 SiO 3 Modification
慈立杰课题组 , 哈尔滨工业大学（深圳）
Nondestructive Measurement for Front Facet Temperature of Semiconductor Lasers
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Research on temperatures located within facet coating layers along z-axis of semiconductor lasers
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of Surface Roughness on Thermal Contact Resistance of Fixed Interface in Thermal Measurement of Electron Device
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Study of traps in low-temperature polysilicon thin film transistors using a current transient method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Experimental investigation on dipole and band offset affected by charge neutrality level modulation
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Rapid test method for thermal characteristics of semiconductor devices
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal analysis of multiple light sources based on the superposition method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
B13-P-01Temperature Characterization of Self-heating in GaN-based Transistors by Cathodeluminescence Spectroscopy
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Temperature distribution measurement based on field-programmable gate array embedded ring oscillators
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Analysis of the hybrid trapping effect in GaN HEMTS based on the current transient spectroscopy
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effects of Static and Repetitive Uniaxial Bending Strains on the Electrical Properties and Trap Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Trap Characterization of Trench-Gate SiC MOSFETs based on Transient Drain Current
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A numerical calibration of structure-function transient thermal measurement based on Cauer RC network
Novel Semiconductor Devices and Reliability Lab , 北京工业大学