array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6225" } A current-transient method for identifying the spatial positions of traps in GaN-based HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

大学 北京工业大学 / 信息学部
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A current-transient method for identifying the spatial positions of traps in GaN-based HEMTs

2018
会议 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)
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