A voltage-transient method for characterizing traps in GaN HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6220" } A voltage-transient method for characterizing traps in GaN HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

关注

A voltage-transient method for characterizing traps in GaN HEMTs

2019

期刊 Microelectronics Reliability

作者 Xiang Zheng · Shiwei Feng · Yifu Gao · Yamin Zhang · Yunpeng Jia · Shijie Pan

下载全文

卷 93
页码 57-60
Elsevier BV
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2018.12.009

LabXing 上可以免费创建课题组网站