Trap Characterization of Trench-Gate SiC MOSFETs based on Transient Drain Current - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "15318" } Trap Characterization of Trench-Gate SiC MOSFETs based on Transient Drain Current - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Trap Characterization of Trench-Gate SiC MOSFETs based on Transient Drain Current

2023

期刊 IEEE Transactions on Power Electronics

作者 Shan Jiang · Meng Zhang · Xianwei Meng · Xiang Zheng · Shiwei Feng · Yamin Zhang

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页码 1-9
Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0885-8993
DOI: 10.1109/tpel.2023.3242950

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