Variation of Dominant Degradation Mechanism in AlGaN Barrier Layer With Different Voltage Stress on the Gate of AlGaN/GaN High Electron Mobility Transistors - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6246" } Variation of Dominant Degradation Mechanism in AlGaN Barrier Layer With Different Voltage Stress on the Gate of AlGaN/GaN High Electron Mobility Transistors - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Variation of Dominant Degradation Mechanism in AlGaN Barrier Layer With Different Voltage Stress on the Gate of AlGaN/GaN High Electron Mobility Transistors

2015

期刊 IEEE Electron Device Letters

作者 Lei Shi · Shiwei Feng · Yamin Zhang · Bangbing Shi · Kun Liu

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卷 36
期 4
页码 321-323
Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0741-3106
DOI: 10.1109/led.2015.2399774

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