array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "12331" } A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage - Novel Semiconductor Devices and Reliability Lab | LabXing

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A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

2020
期刊 IEEE Transactions on Electron Devices
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  • 卷 67
  • 期 12
  • 页码 5454-5459
  • Institute of Electrical and Electronics Engineers (IEEE)
  • ISSN: 0018-9383
  • DOI: 10.1109/ted.2020.3033259
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