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#Xuan Li
Identifying the Traps in the Channel Region in GaN-based HEMTs Using a Nonmonotone Drain Current Transient
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effects of temperature and bias voltage on electron transport properties in GaN highelectron-mobility transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Nondestructive Measurement for Front Facet Temperature of Semiconductor Lasers
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Research on temperatures located within facet coating layers along z-axis of semiconductor lasers
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of Surface Roughness on Thermal Contact Resistance of Fixed Interface in Thermal Measurement of Electron Device
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of interface morphology on thermal contact resistance in thermal management of electronic devices
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors under Reverse Pulse Electrical Stress Using the Voltage-Transient Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A numerical calibration of structure-function transient thermal measurement based on Cauer RC network
Novel Semiconductor Devices and Reliability Lab , 北京工业大学