Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "13949" } Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters

2021

期刊 Semiconductor Science and Technology

作者 Xuan Li · Shiwei Feng · Zhihong Feng · Yuanjie Lv · Yuangang Wang · Xin He · Kun Bai · Shijie Pan

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卷 36
期 11
页码 115010
IOP Publishing
ISSN: 0268-1242
DOI: 10.1088/1361-6641/ac1d23

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