Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "12330" } Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method

2021

期刊 IEEE Transactions on Electron Devices

作者 Shijie Pan · Shiwei Feng · Xuan Li · Xiang Zheng · Xiaozhuang Lu · Xin He · Kun Bai · Yamin Zhang · Lixing Zhou

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页码 1-6
Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0018-9383
DOI: 10.1109/ted.2021.3108755

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