array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "7158" } Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation - Novel Semiconductor Devices and Reliability Lab | LabXing

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Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation

2019
期刊 IEEE Transactions on Electron Devices
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  • 卷 66
  • 期 9
  • 页码 3784-3788
  • Institute of Electrical and Electronics Engineers (IEEE)
  • ISSN: 0018-9383
  • DOI: 10.1109/ted.2019.2928560
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