Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6219" } Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current

2019

期刊 IEEE Transactions on Power Electronics

作者 Bangbing Shi · Shiwei Feng · Yamin Zhang · Kun Bai · Yuxuan Xiao · Lei Shi · Hui Zhu · Chunsheng Guo

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页码 1-1
Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0885-8993
DOI: 10.1109/tpel.2019.2894346

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