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#Chunsheng Guo
Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of post-deposition annealing pressure on bipolar resistive switching in RF sputtered BiFeO<inf>3</inf>/Nb:SrTiO<inf>3</inf> heterostructure
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Substrate thinning and external stress effect on the output characteristics of AlGaN/GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Study of Heat Transport Behavior in GaN-Based Transistors by Schottky Characteristics Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Cycled Thermomechanical Failure in 808-nm High-Power AlGaAs/GaAs Laser Diode Bars
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Quick screen of thermal resistance for batching high brightness LEDs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
The channel temperature dependence of drain transient response in AlGaN/GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identifying the failure mechanism in accelerated life tests by two-parameter lognormal distributions
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Determination of Thermal Fatigue Delamination of Die Attach Materials for High-Brightness LEDs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal resistance analysis related to the degradation of GaAs-Based laser diodes
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal Analysis of GaAs-Based High Power Laser Diodes Related to Degradation
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal stability evaluation of die attach for high brightness LEDs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Determination of channel temperature of AlGaN/GaN HEMT by electrical method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal analysis of high power LED array system
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal Analysis of the Multi-Chip Vertical Packaged White LED
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of Uniaxial Tensile Strains at Different Orientations on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Study of traps in low-temperature polysilicon thin film transistors using a current transient method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Non-destructive peak junction temperature measurement of double-chip IGBT modules with temperature inhomogeneity
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Measuring Junction Temperature Inhomogeneity of Double-chip IGBT Modules by Electrical Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Multi-physics field coupling simulation modeling and analysis of StakPak insulated gate bipolar transistor device
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Real-time measurement and control of junction temperature of VDMOS in power cycle test
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal analysis of ICs based on equivalent thermal resistance
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Structure optimization of heat sink for high power LED street lamp
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Analysis of degradation of GaN-Based light-emitting diodes
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Experimental study on the reliable working life of PUF chip for 8 years
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Thermal analysis of ICS based on equivalent thermal resistance and skill language
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Reliability of solder joints in High-power LED package in power cycling tests
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
The investigation of failure mechanism of n-GaN/Ti/Al/Ni/Au ohmic contact by novel TLM
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Study of the temperature distribution in insulated gate bipolar transistor module under different test conditions
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Influence of heat source size on thermal resistance of AlGaN/GaN HEMT
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
The thermal properties of AlGaAs/GaAs laser diode bars analyzed by the transient thermal technique
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Measurement Deviation of the Virtual Junction Temperature by the Saturation Voltage Drop Method for Insulated-Gate Bipolar Transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effects of Static and Repetitive Uniaxial Bending Strains on the Electrical Properties and Trap Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Measuring Double-Sided Thermal Resistance of Press-Pack IGBT Modules Based on Ratio of Double-Sided Heat Dissipation
Novel Semiconductor Devices and Reliability Lab , 北京工业大学