The thermal properties of AlGaAs/GaAs laser diode bars analyzed by the transient thermal technique - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "15086" } The thermal properties of AlGaAs/GaAs laser diode bars analyzed by the transient thermal technique - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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The thermal properties of AlGaAs/GaAs laser diode bars analyzed by the transient thermal technique

2013

期刊 Solid-State Electronics

作者 Yanbin Qiao · Shiwei Feng · Cong Xiong · Xiaoyu Ma · Hui Zhu · Chunsheng Guo · Guanghua Wei

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卷 79
页码 192-195
Elsevier BV
ISSN: 0038-1101
DOI: 10.1016/j.sse.2012.07.007

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