Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6258" } Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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2012

期刊 Journal of Semiconductors

作者 Guangchen Zhang · Shiwei Feng · Jingwan Li · Yan Zhao · Chunsheng Guo

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卷 33
期 4
页码 044003
IOP Publishing
ISSN: 1674-4926
DOI: 10.1088/1674-4926/33/4/044003

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