array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6236" } Study of Heat Transport Behavior in GaN-Based Transistors by Schottky Characteristics Method - Novel Semiconductor Devices and Reliability Lab | LabXing

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Study of Heat Transport Behavior in GaN-Based Transistors by Schottky Characteristics Method

2017
期刊 IEEE Transactions on Electron Devices
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  • 卷 64
  • 期 5
  • 页码 2166-2171
  • Institute of Electrical and Electronics Engineers (IEEE)
  • ISSN: 0018-9383
  • DOI: 10.1109/ted.2017.2684180
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