Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6255" } Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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2013

期刊 Microelectronics Reliability

作者 Yamin Zhang · Shiwei Feng · Hui Zhu · Jianwei Zhang · Bing Deng

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卷 53
期 5
页码 694-700
Elsevier BV
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2013.02.004

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