Evaluation of the drain—source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6248" } Evaluation of the drain—source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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2014

期刊 Journal of Semiconductors

作者 Lin Ma · Shiwei Feng · Yamin Zhang · Bing Deng · Yuan Yue

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卷 35
期 9
页码 094006
IOP Publishing
ISSN: 1674-4926
DOI: 10.1088/1674-4926/35/9/094006

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