Research on the Wake-up Effect of Ferroelectric HfO2-ZrO2 Thin Films - Novel Semiconductor Devices and Reliability Lab

Abstract The appearance of ferroelectric (FE) and anti-ferroelectric (AFE) properties in HfO2-based thin films is highly intriguing in terms of both the scientific context and practical application in various electronic and energy-related devices. Interestingly, these materials showed a “wake-up effect”, which refers to the increase in remanent polarization with increasing electric field cycling number before the occurrence of the fatigue effect. The appearance of ferroelectric (FE) and anti-ferroelectric (AFE) properties in HfO2-based thin films is highly intriguing in terms of both the scientific context and practical application in various electronic and energy. In this paper, we have conducted an in-depth study on the relationship between the Wake-up effect in HfO2-based films and oxygen vacancies.