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Study of traps in low-temperature polysilicon thin film transistors using a current transient method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Strain distribution and electrical characteristics of flexible low-temperature polysilicon thin film transistors under biaxial bending
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Research on the Wake-up Effect of Ferroelectric HfO2-ZrO2 Thin Films
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effects of Static and Repetitive Uniaxial Bending Strains on the Electrical Properties and Trap Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Wake-up effect in Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub> ferroelectric thin-film capacitors under a cycling electric field
Novel Semiconductor Devices and Reliability Lab , 北京工业大学