array(2) { ["lab"]=> string(3) "601" ["publication"]=> string(4) "3569" } FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin - 微电子所鸿之微集成电路联合计算实验室 | LabXing

FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin