#Chenguang He

High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates

先进材料平台 , 广东省科学院

High-Quality AlN Film Grown on Sputtered AlN/Sapphire via Growth-Mode Modification

先进材料平台 , 广东省科学院

Performance enhancement of AlGaN-based 365 nm ultraviolet light-emitting diodes with a band-engineering last quantum barrier

先进材料平台 , 广东省科学院

Growth of high quality AlN/sapphire templates with high growth rate using a medium-temperature layer

先进材料平台 , 广东省科学院

Point-Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD

先进材料平台 , 广东省科学院

Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a Al x Ga1-x N carrier reservoir layer

先进材料平台 , 广东省科学院

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